2005. 12. 7 1/2 semiconductor technical data KDV215 revision no : 0 tv tuning. features high capacitance ratio : c2v/c25v=6.5(typ.) low series resistance : r s =0.4 (typ.) excellent c-v characteristics, and small tracking error. useful for small size tuner. maximum rating (ta=25 ) usc dim millimeters a b c d e f g h j k 2.50 0.1 1.25 0.05 0.90 0.05 0.30+0.06/-0.04 1.70 0.05 min 0.17 0.126 0.03 0~0.1 0.15 0.05 0.4 0.05 2 +4/-2 l m 4~6 i 1.0 max cathode mark m m i c j g d 2 1 b 1. anode 2. cathode e k a f h l + _ + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) variable capacitance diode silicon epitaxial planar diode characteristic symbol rating unit reverse voltage v r 30 v peak reverse voltage v rm 35 (r l =10 ) v junction temperature t j 125 storage temperature range t stg -55 125 characteristic symbol test condition min. typ. max. unit reverse current i r v r =30v - - 10 na i r v r =30v, (ta=60 ) - - 100 capacitance c 2v v r =2v, f=1mhz 14.16 - 16.25 pf c 25v v r =25v, f=1mhz 2.11 - 2.43 capacitance ratio c 2v /c 25v 5.90 6.50 7.15 - series resistance r s v r =5v, f=470mhz - 0.4 0.55 type name marking v a note : available in matched group for capacitance to 2.5%. c(max.)-c(min.) 0.025 c(min.) (v r =2~25v)
2005. 12. 7 2/2 KDV215 revision no : 0 c t - v r reverse voltage v r (v) 04 capacitance c t (pf) 8 12 16 20 24 1 10 3 30 5 50 100 f=1mhz ta=25 c r s - v r 131030 0 series resistance r s ( ? ) 5 f=470mhz ta=25 c 0.2 0.4 0.6 0.8 -40 c - ta -2 capacitance change ratio c (%) -20 0 20 40 60 80 -1 0 1 2 3 f=1mhz v =2v r 14 20 25 ambient temperature ta ( c) note : c(%) = 100 c(25) c(ta) - c(25) 28 reverse voltage v r (v)
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